Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure
نویسنده
چکیده
In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high deposition pressure ( 4 mbar), high plasma power and low substrate temperature ( 200 C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical properties is investigated. We determine the deposition conditions that lead to the formation of p-type nanocrystalline silicon thin films with very high crystallinity, high value of dark conductivity (>7 (U cm) 1) and high optical band gap ( 1.7 eV). Modeling of ellipsometry spectra reveal that the film growth mechanism should proceed through a sub-surface layer mechanism that leads to silicon crystallization. The obtained films are very good candidates for application in amorphous and nanocrystalline silicon solar cells as a p-type window layer. 2009 Published by Elsevier Ltd.
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